Dry etching of platinum electrodes is carried out by inductively coupled plasma (ICP) methods as required in Surface Acoustic Wave (SAW) devices for high temperature applications. Only with argon gas, platinum etching characteristics with different ICP power/RF power are investigated, the platinum electrodes in SAW devices are obtained by optimized etching conditions. Moreover, redeposition and its influences on the electrodes fabrication are revealed, which results from sputtering effect in platinum etching, and post processing is employed to remove it in the final fabrication of SAW devices.